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filingDate 2015-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f1a6cdb5693fcd86d675d08ca396887
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publicationDate 2015-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-105140395-A
titleOfInvention A kind of PN junction diode sensor and its manufacturing method and application
abstract The invention relates to a PN junction diode sensor and its manufacturing method and application, comprising a substrate with a silicon dioxide layer with a thickness of 500nm on the surface; an N-type semiconductor layer and a P-type semiconductor layer evaporated on the surface of the silicon dioxide layer, two Parts of the two semiconductor layers overlap each other, and the width of the overlapping part is less than 1/10 of the width of the semiconductor layer; gold electrodes are arranged on the N-type semiconductor layer and the P-type semiconductor layer, and the distance between the two gold electrodes is 1/2 of the electrode length. 1/100-3/100, the sensor is used to detect the content of substances with high sensitivity. Compared with the prior art, the invention improves the electrical performance and sensitivity of the sensor, and realizes the direct detection of powder substances.
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