http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105140320-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035272 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0352 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 |
| filingDate | 2015-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105140320-B |
| titleOfInvention | A kind of CIGS based thin film solar cells and its manufacture method |
| abstract | A kind of method for forming CIGS based thin film solar cells, including substrate, the deposited metal dorsum electrode layer on substrate then carry out P1 delineations to metallic back electrode layer, then deposit one layer of MoS x (0<X≤2) or Mo (S 1‑x Se x ) y (0<x<1,0<The film layer of y≤2), is then formed on light absorbing zone, the buffer layer on light absorbing zone, and electrically conducting transparent Window layer is deposited on the buffer layer.One layer of MoS is first deposited by before light absorbing zone is formed x (0<X≤2) or Mo (S 1‑x Se x ) y (0<x<1,0<The film layer of y≤2), can effectively reduce the shunting action of inside battery, improve the parallel resistance and fill factor, curve factor of battery. |
| priorityDate | 2015-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 66.