http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105112870-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-58 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-08 |
| filingDate | 2015-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105112870-B |
| titleOfInvention | A kind of ferroelectricity vanadium oxide composite film and preparation method thereof |
| abstract | The present invention relates to photoelectric sensor technology field, more particularly to a kind of ferroelectricity vanadium oxide composite film F_VOx for being used for infrared thermal imaging sensor and THz imaging sensors and preparation method thereof, the ferroelectricity vanadium oxide composite film is the niobium base ferroelectricity vanadium oxide double-layer compound film being combined by vanadium oxide film and metal niobium or niobium base film of ferroelectric material.The present invention utilizes the excellent heat transfer of metal niobium and niobium based ferroelectric film material, heat-absorption properties first, lift the heat absorption rate of vanadium oxide film, ferroelectricity vanadium oxide composite film F_VOx temperature resistance coefficient is set to bring up to 3.8~4.2%/K, solve the problems, such as the high TCR of partial array and avoid Traditional dopant technique to negative effect caused by vanadium oxide film, being applied to sensor can General Promotion infrared thermal imaging, the performance of Terahertz imaging sensor. |
| priorityDate | 2015-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.