| abstract |
It is proposed that a kind of connection engagement mating member (1,2), such as opto-electronic semiconductor chip (such as light-emitting diode chip for backlight unit) and the method for circuit board or metallic conductor frame, methods described of being used for has following step：First engagement mating member (1) and the second engagement mating member (2) are provided；First sequence of layer (10) is applied on the first engagement mating member (1), first sequence of layer includes at least one comprising silver or by the silver-colored layer (11,15) formed；Second sequence of layer (20) is applied on the second engagement mating member (2), second sequence of layer includes indium and the layer (29) of bismuth or the layer (23) comprising indium and the layer (22,24) comprising bismuth including at least one；Under the junction temperature of 120 DEG C of highest, in default engaging time, the first sequence of layer (10) and the second sequence of layer (20) are pressurized to together on the end face of the first engagement mating member (1) and the second engagement mating member (2) respectively at it using pressure (p) is engaged, wherein the first sequence of layer (10) and the second sequence of layer (20) are fused into articulamentum (30), and the articulamentum is directly adjacent to the first engagement mating member and the second engagement mating member and its fusion temperature is at least 260 DEG C. |