| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1248
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 |
| filingDate |
2010-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2018-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-105097946-B |
| titleOfInvention |
Semiconductor device and its manufacture method |
| abstract |
The present invention relates to semiconductor device and its manufacture method.In using the thin film transistor (TFT) of the first oxide semiconductor layer and the bottom grating structure of the lamination of the second oxide semiconductor layer; the oxide insulating layer as channel protective layer being in contact with it is formed on a part of oxide semiconductor layer overlapping with gate wiring layer; and in the identical step for forming the insulating layer, form the oxide insulating layer of the peripheral part (including side surface) of the lamination of covering oxide semiconductor layer. |
| priorityDate |
2009-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |