http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105097658-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-538 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2014-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105097658-B |
| titleOfInvention | The production method of semiconductor devices, interconnection layer and interconnection layer |
| abstract | This application discloses the production method of a kind of semiconductor devices, interconnection layer and interconnection layer, the production method of the interconnection layer includes：It is formed on a semiconductor substrate and has reeded dielectric layer；Metal layer is formed in groove；Fill the hole in the surface of dielectric layer；Metallic cover layer is formed on the surface of dielectric layer and the surface of metal layer.The production method of interconnection layer in the application is after metal layer is formed, and fills the hole in the surface of dielectric layer, and the hole in the surface of dielectric layer be filled after form metallic cover layer on the surface of dielectric layer and the surface of metal layer again.So, since the hole in the surface of dielectric layer is filled, then, forming the material of metallic cover layer, just the no longer readily permeable hole into dielectric layer surface suffers, and then also do not allow to be also easy to produce conductive path in the dielectric layer, it significantly reduces interconnection layer and the possibility of drain conditions occurs. |
| priorityDate | 2014-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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