http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105097433-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2014-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105097433-B |
| titleOfInvention | A kind of semiconductor devices and preparation method thereof, electronic device |
| abstract | The present invention relates to a kind of semiconductor devices and preparation method thereof, electronic device, the described method includes：Substrate is provided, forms the protrusion with the first inclined-plane on the substrate, first inclined-plane is 50 60 ° with the acute angle that horizontal plane is formed；The deposition film layer in the protrusion, to form the second inclined-plane on first inclined-plane, second inclined-plane is 30 40 ° with the acute angle that horizontal plane is formed.The advantage of the invention is that：(1) present invention breaches the limitation on 50 60 ° of inclined-planes in the prior art, and the more slow inclined-plane of the gradient is prepared.(2) inclined-plane is prepared by deposition process in the method for the invention, its rough surface performance of inclined-plane obtained relative to etching is greatly improved, is conducive to subsequent technique, further improves the performance of semiconductor devices. |
| priorityDate | 2014-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 16.