| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022425
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1607
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32053
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1642
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1879
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28052
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1639
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1692
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1882
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-54 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-16 |
| filingDate |
2014-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2017-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-105074052-B |
| titleOfInvention |
The method that metal silicide is formed using the solution containing gold ion and fluorine ion |
| abstract |
The present invention relates to a kind of method for forming nickle silicide or cobalt silicide, comprise the following steps：Surface containing silicon substrate is exposed in the aqueous solution of the gold ion containing 0.1mM~10mM and 0.6M~3.0M fluorine ion and continues the time between 5 seconds~5 minutes, the layer being substantially made up of nickel or cobalt is deposited on the substrate of activation by electroless plating means, apply rapid thermal treatment at a temperature of between 300 DEG C~750 DEG C, so as to form nickle silicide or cobalt silicide.The aqueous solution includes the surfactant being selected from containing at least one anion or the compound of nonionic polar group and the alkyl chain containing 10~16 carbon atoms.This method substantially may apply to the manufacture of nand memory and photovoltaic cell. |
| priorityDate |
2013-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |