http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105063555-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3206 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-6562 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3293 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3286 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-77 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-5445 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-63416 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3414 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-62695 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-086 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-5806 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-457 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-6262 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-01 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-58 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-08 |
| filingDate | 2008-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105063555-B |
| titleOfInvention | Amorphous composite oxide film, crystalline composite oxide film, the manufacture method of amorphous composite oxide film, the manufacture method of crystalline composite oxide film and composite oxide sintered body |
| abstract | The present invention relates to film, it is characterized in that, substantially include indium, tin, magnesium and oxygen, tin is with Sn/ (In+Sn+Mg) atomicity than containing for 5~15% ratio, for magnesium with Mg/ (In+Sn+Mg) atomicity than containing for 0.1~2.0% ratio, remainder includes indium and oxygen, and by being annealed at the temperature below 260 DEG C, membrane crystallization, the resistivity of film is below 0.4m Ω.It is an object of the invention to provide ITO basement membranes, the manufacture method of the film and sintered body for manufacturing the film, the ITO basement membranes have the property that：By by for flat-panel monitor with the ITO base films of show electrode etc. in the state of substrate is without heating, in film forming when do not add water to carry out spatter film forming, obtain amorphous ITO basement membranes, and the ITO basement membranes, by being annealed at the less high temperature below 260 DEG C to crystallize, the resistivity after crystallization reduces. |
| priorityDate | 2007-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.