| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2029-7858 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1037
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6681
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66818
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66439
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-775 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2013-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_217d5b464ee128c1d2c67dea2fa63fa8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bffb60247b05a8dbf7183ffdb8606886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b81fe4b6f365fbca017fb6abb77e428f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_229d6db203ac0e1ae7b892d2442f1bfc |
| publicationDate |
2015-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-105051905-A |
| titleOfInvention |
Nanowire Transistors with Underlayer Etch Stops |
| abstract |
The nanowire devices of the present description can be produced by including at least one underlying etch stop formed during the fabrication of at least one nanowire transistor to help protect the source structure and/or drain structure from damage that may result from the fabrication process. damage. When the material used to fabricate the source structure and/or the drain structure is susceptible to etching by the process used in removing the sacrificial material, i.e. for the source structure and/or the drain structure material low selectivity, the underlying etch stop can prevent damage to the source structure and/or the drain structure, so that it can prevent possible short circuit between the contacts formed by the pole structure. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105551960-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105551960-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110729189-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108695377-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110729189-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109599335-A |
| priorityDate |
2013-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |