http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105047677-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1292 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1248 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1218 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-77 |
| filingDate | 2015-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105047677-B |
| titleOfInvention | Display base plate and preparation method thereof and display device |
| abstract | The present invention relates to a kind of display base plate and preparation method thereof and display device, above-mentioned preparation method includes：Form substrate；Thin film transistor (TFT) is formed in substrate, formed with the second insulating barrier between grid and active layer, is formed in substrate formed with the first insulating barrier, active layer in the first insulating barrier；The 3rd insulating barrier is formed on thin film transistor (TFT)；Pixel electrode is formed on the 3rd insulating barrier；The 4th insulating barrier is formed on pixel electrode, wherein, at least one layer of material in substrate, the first insulating barrier, the second insulating barrier, the 3rd insulating barrier and the 4th insulating barrier is organic material, and at least one layer of material is inorganic material.Each insulating barrier and the substrate formed respectively in thin film transistor (TFT) by organic material and inorganic material, thin film transistor (TFT) can be caused both to possess the advantages of organic material, both manufacture craft is simplified, the physical property of display base plate where improving the electric property of thin film transistor (TFT), and thin film transistor (TFT) again. |
| priorityDate | 2015-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.