| abstract |
A kind of field effect transistor includes substrate, the first graphene (Gr) layer above substrate, the second graphene (Gr) layer above substrate, fluorinated graphene (GrF) layer on substrate and between the first graphene layer and the second graphene layer, the first ohmic contact on the first graphene layer, the second ohmic contact on the second graphene layer, the grid being aligned on fluorinated graphene layer, and the gate dielectric between grid and fluorinated graphene layer between grid and the first ohmic contact and the second ohmic contact. |