http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104969333-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 2014-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104969333-B |
| titleOfInvention | The dry-etching method of silicon |
| abstract | The dry-etching method of the present invention is characterised by, it is the dry-etching method of the silicon layer of etching process object in process chamber, the etching gas of iodine heptafluoride is included in the pressure limit supply that supply pressure is 66kPa~0.5MPa from supply source, the etching gas that will remain in the pressure limit imported into the process chamber for being decompressed to the pressure lower than foregoing supply pressure, etches foregoing silicon layer.In the dry-etching method, etching gas adiabatic expansion is made under gentle pressure condition to etch silicon, therefore is not concerned about the increase of the burden, installation cost to device, also, distributing homogeneity is good in the face of etch quantity. |
| priorityDate | 2013-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.