http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104966663-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02422 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02592 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02513 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02444 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02686 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78675 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-16 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04 |
| filingDate | 2015-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104966663-B |
| titleOfInvention | Low-temperature polysilicon thin film, method for preparing the same, and thin-film transistor |
| abstract | A method for preparing a low temperature polysilicon film, comprising the following steps: forming a buffer layer on a substrate; performing a patterning process on the buffer layer to form a groove on the buffer layer corresponding to a non-channel region; A graphene layer is formed in the groove; an amorphous silicon layer is deposited on the buffer layer; laser annealing is performed on the amorphous silicon layer, so that the amorphous silicon layer forms a polycrystalline silicon layer. The above-mentioned low-temperature polysilicon film is provided with a graphene layer in the corresponding area of the non-channel region, and the thermal conductivity of graphene is used to form a temperature gradient in the silicon film, so that the polysilicon of the obtained low-temperature polysilicon film has larger crystal grains and a relatively high distribution. evenly. |
| priorityDate | 2015-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.