http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104952877-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11568 |
| filingDate | 2015-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104952877-B |
| titleOfInvention | A kind of trapped-charge memory and preparation method thereof |
| abstract | The invention provides a kind of trapped-charge memory and preparation method thereof.The structure of the trapped-charge memory is p Si substrates, SiO successively from the bottom to top 2 Tunnel layer, Zr 0.5 Hf 0.5 O 2 Film layer and electrode film layer；The electrode film layer is Au or Pt electrode film layers；The Zr 0.5 Hf 0.5 O 2 Film layer is the SiO by made by magnetron sputtering on p Si substrates 2 Tunnel layer is to form the Zr 0.5 Hf 0.5 O 2 Formed after film layer by annealing process, the electrode film layer is in the Zr 0.5 Hf 0.5 O 2 Formed in film layer by vacuum evaporation.The present invention can obtain the moderate SiO of thickness by controlling annealing temperature and annealing time 2 Tunnel layer, the SiO of suitable thickness 2 Tunnel layer and Zr 0.5 Hf 0.5 O 2 Lacking oxygen in film layer has a great impact to device, and device can be made to show good storage characteristics and retention performance. |
| priorityDate | 2015-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.