http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104952706-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2014-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104952706-B |
| titleOfInvention | A kind of preparation method of semiconductor devices |
| abstract | The present invention relates to a kind of preparation method of semiconductor devices, methods described includes providing Semiconductor substrate, formed with self-aligned double patterning case mask stack in the Semiconductor substrate, the self-aligned double patterning case mask stack includes the hard mask layer, stop-layer, virtual core material layer sequentially formed；The virtual core material layer is patterned, to form multiple virtual cores being isolated from each other；Clearance wall is formed in the side wall of the virtual core；The virtual core is removed, retains the clearance wall；Using the clearance wall as mask, the stop-layer, the hard mask layer are etched, to transfer a pattern to the hard mask layer；Using the hard mask layer as Semiconductor substrate described in mask etch part, to form multiple fins in the Semiconductor substrate.It is the advantage of the invention is that state-of-the-art by being prepared from simplified autoregistration mask stack and simple technical process（state‑of the‑art）Fin structure. |
| priorityDate | 2014-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 15.