| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_209553962cfc04543cf9de5730e0408c |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-4125
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4916
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C14-0063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B10-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-08 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-413
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 |
| filingDate |
2015-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b0369f4a20f033f932d87134c5753dc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6b3fbdd8b93d93fc4796fdeb716e125f |
| publicationDate |
2015-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-104934424-A |
| titleOfInvention |
Integrated structures including adjacent transistors |
| abstract |
An integrated structure includes a first MOS transistor having a first controllable gate region overlying a first gate dielectric and a second controllable gate region adjacent to the first MOS transistor and having a first controllable gate region overlying the first gate dielectric. gate area of the second MOS transistor. A common conductive region overlies the first and second gate regions and is separated therefrom by a second gate dielectric. The common conductive region includes a continuous element positioned over portions of the first and second gate regions and a branch extending from the continuous element down towards the substrate as far as the first gate dielectric. The branch is positioned between the first gate region and the second gate region. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107093456-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107093456-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111095387-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11404008-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11670241-B2 |
| priorityDate |
2014-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |