http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104934372-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-125 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0245 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02686 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1222 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B28-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B1-023 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78672 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02488 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6675 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02502 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02592 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-77 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2015-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104934372-B |
| titleOfInvention | A low-temperature polysilicon thin film, its manufacturing method, and related devices |
| abstract | The invention discloses a low-temperature polysilicon film, a manufacturing method thereof, and related devices. The main contents include: providing a base substrate, forming a heat storage function layer on the base substrate, and forming a heat storage function layer on the heat storage function layer. forming a first buffer layer, and forming a first amorphous silicon layer covering the first buffer layer, performing an excimer laser annealing process on the base substrate forming the first amorphous silicon layer to form a low-temperature polysilicon film, wherein the The heat storage functional layer and the first amorphous silicon layer can enter the heat absorption state and the heat dissipation state synchronously. Therefore, when the excimer laser annealing process is performed, the first amorphous silicon layer located on the surface can use the energy released by the bottom heat storage functional layer to delay the cooling time, thereby prolonging the growth time of low-temperature polysilicon and increasing the temperature of low-temperature polysilicon. grain size. |
| priorityDate | 2015-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.