| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_129e393582e6bdf4029baf2206522f45 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08J2483-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08J2475-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-31598
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-841
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08J2367-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08J2365-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-086
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08J7-0423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08J7-046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08J7-048
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-08 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08J7-048
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08J7-046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B9-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B33-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B33-02 |
| filingDate |
2013-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b4a8bff86fbf2f5c0b702f18ebde67b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a032af06833e18b9013ce9f8a86cf6ed |
| publicationDate |
2015-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-104903089-A |
| titleOfInvention |
gas barrier film |
| abstract |
An object of the present invention is to provide a gas barrier film having high gas barrier properties and excellent bending resistance. The gas barrier film of the present invention is characterized in that it is a gas barrier film having an inorganic layer [A] and a silicon compound layer [B] on at least one side of the polymer substrate in order from the polymer substrate side, The inorganic layer [A] contains a zinc compound and silicon oxide, the silicon compound layer [B] contains silicon oxynitride, and the inorganic layer [A] is in contact with the silicon compound layer [B]. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110172674-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109476121-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109476121-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I732028-B |
| priorityDate |
2013-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |