http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104900688-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0623 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0821 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7378 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-201 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0705 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0716 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8252 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-737 |
| filingDate | 2014-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104900688-B |
| titleOfInvention | Orient the heteroj unction bipolar transistor arrangement of epitaxy |
| abstract | A kind of heteroj unction bipolar transistor arrangement for orienting epitaxy, it is direct or indirect grow up on the inclined GaAs substrate in (100) direction (111) B faces, from bottom to top sequentially secondary collector layer, collector layer, base layer, the emitter layer of storehouse on substrate, emitter-base bandgap grading cap rock and ohmic contact layer, wherein emitter layer are more than the III V races semiconductor of base layer for N-type energy gap.In addition, also can further include the tunneling collector layer being clipped between collector layer and base layer, formed by InGaP (InGaP) or indium arsenic phosphide gallium (InGaAsP).The present invention is grown up on the inclined GaAs substrate in (100) direction (111) B faces, and inclined angle is 0.6 °~25 °, can be all easily achievable in general process margins, and indium is made to exist with gallium<111>Side reaches up to very orderly arrangement, reduces base-emitter junction and discontinuous, the enhancement piece electrical characteristic of the tunneling collector junction conductive strips of base stage. |
| priorityDate | 2014-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.