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filingDate 2013-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2018-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2018-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-104885221-B
titleOfInvention Solid-state image sensing device and solid-state imaging unit including the device
abstract The invention provides an image sensor, an imaging device, and electronic equipment. These can include an image sensor or an imaging device including a first insulating layer over a semiconductor substrate. A recess is formed in the first insulating layer. An organic photoelectric conversion part fills the depressed part. It is also possible to provide one or more inorganic photoelectric conversion parts, and the organic photoelectric conversion part overlaps with the inorganic photoelectric conversion part. Alternatively or additionally, the depressed portion can be tapered from a side adjacent to a light receiving side of the image sensor to a side adjacent to the inorganic photoelectric conversion portion.
priorityDate 2012-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 32.