http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104882507-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1804 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-028 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0745 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0745 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y40-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-028 |
| filingDate | 2015-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104882507-B |
| titleOfInvention | Pt-GFW/SiO2/n-Si heterojunction material and preparation method thereof |
| abstract | The invention discloses a Pt-GFW/SiO2/n-Si heterojunction material and a preparation method thereof. After a graphene network (GFW) grown by using a chemical vapor deposition (CVD) method is transferred onto an n-type silicon (n-Si (100)) substrate, a heterojunction thin film material having a white light photovoltaic effect is formed. By the way of laser irradiation of a high platinic acid solution to load platinum nanoparticles, the platinum nanoparticles are loaded onto the surface of a GFW/n-Si device. According to the invention, the platinum-loaded graphene, silicon solar cells are irradiated at room temperature and with a simulated solar light source of 100mW/cm2, the open-circuit photo voltage of the device is increased from 474mV to 545mV, the short-circuit photocurrent is increased from 18.2mA/cm2 to 19.6mA/cm2, the fill factor is increased from 42.8% to 51.2% or more, and the photoelectric conversion efficiency is increased from 3.69% to 5.48%. The adopted method is excellent in performance, low in cost and easy in preparation; and different from methods in the prior art in which nitrotoluene is used as a solvent, the method uses deionized water as a solvent, and is an excellent method which can enhance visible light sensor materials and have potential photovoltaic device performance. |
| priorityDate | 2015-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 47.