http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104867952-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146 |
| filingDate | 2015-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104867952-B |
| titleOfInvention | The method for improving silicon substrate back side illumination image sensor ultraviolet light response |
| abstract | A method of silicon substrate back side illumination image sensor ultraviolet light response being improved, innovation is：During making silicon substrate back side illumination image sensor, back side implanted layer is handled using wet etching or dry etching, the dead zone on the implanted layer of the back side is removed, then carries out later processing operation again；The method have the benefit that：The ultraviolet response of silicon substrate back side illumination image sensor can be improved. |
| priorityDate | 2015-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.