http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104854709-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-544 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H02J50-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0693 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H02J50-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H02J50-70 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-056 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0547 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1844 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0304 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0693 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H02J50-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-054 |
| filingDate | 2013-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104854709-B |
| titleOfInvention | Laser power converter |
| abstract | A kind of laser power converter LPC devices (1) include anti-reflection coating (10), Window layer (20), active region (30), electronic barrier layer (40), distributed Bragg reflector DBR (50) and substrate (60).The device further includes anode (70), cathode (80) and insulating layer (90).Active region (30) is sowed InGaAsP by phosphorus indium arsenide and is formed, and the ratio of the chemical element in InGaAsP layer is In y Ga 1‑ y As x P 1‑x , and be designed to the electromagnetic radiation that wavelength is 1.55 μm being converted to electric energy.However, the definite composition of InGaAsP is chosen to have slightly above 1.55 μm of band gap wavelength, because in operation, device heating and band gap are to longer wavelength-shift.In order to obtain suitable band gap, composition can be In y Ga 1‑y As x P 1‑x , wherein respectively x=0.948,0.957,0.965,0.968,0.972 or 0.976, y=0.557,0.553,0.549,0.547,0.545 or 0.544. |
| priorityDate | 2012-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419557764 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID31170 |
Total number of triples: 26.