| abstract |
Embodiment includes hetero-junctions tunneling field-effect transistor, and the hetero-junctions tunneling field-effect transistor includes source electrode, raceway groove and drain electrode；Wherein, (a) described raceway groove includes and the corresponding major axis of channel length, and the short axle corresponding and orthogonal with the major axis with channel width；(b) channel length is less than 10nm long；(c) source electrode is doped and makes it have the first polarity, and the source electrode has the first conduction band；(d) to it is described drain electrode be doped make it have with the described first opposite polarity second polarity, and it is described drain electrode there is the second conduction band, second conduction band has higher energy than first conduction band.This document describes other embodiments. |