http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104851972-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H2009-155 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-8542 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H9-02015 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-1051 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H9-171 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-076 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-082 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-277 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-18 |
| filingDate | 2014-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104851972-B |
| titleOfInvention | Piezoelectric thin film element, method for manufacturing the same, and electronic device |
| abstract | A method of manufacturing a piezoelectric thin film element and a piezoelectric thin film element obtained therefrom, which can finely process a piezoelectric thin film using a lead-free alkali niobate without deteriorating the characteristics of the piezoelectric body thin film element. The alkaline niobate based piezoelectric thin film element is characterized by comprising a substrate, a lower electrode film formed on the substrate, a piezoelectric thin film formed on the lower electrode film, and an upper electrode formed on the piezoelectric thin film film, the piezoelectric thin film is composed of an alkali niobate piezoelectric body (the composition formula is (Na x K y Li z )NbO 3 , 0≤x≤1, 0≤y≤1, 0≤z≤0.2, x+ y+z=1) structure, the piezoelectric thin film is processed with a fine pattern as an element and contains a metal element, and its concentration on the upper electrode film side of the piezoelectric thin film is higher than that on the lower electrode film side The concentration of the above-mentioned metal element is high, and the average concentration of the above-mentioned metal element is 5×10 17 atoms/cm 3 or less in the region of the above-mentioned thickness ±15% centered on the position of half the thickness of the above-mentioned piezoelectric thin film. |
| priorityDate | 2014-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.