http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104835525-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2229-723 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2229-743 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-0483 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-82 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-28 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-06 |
| filingDate | 2014-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104835525-B |
| titleOfInvention | Semiconductor memory device and memory system including semiconductor memory device |
| abstract | The semiconductor memory device includes: a memory cell array including a first plurality of normal memory cells and a second plurality of dummy memory cells stacked over a substrate; a first plurality of normal word lines, which are different from the first plurality of normal memory cells memory cells electrically coupled; and a second plurality of dummy word lines electrically coupled to the second plurality of dummy memory cells, wherein the first plurality of normal memory cells includes at least one bad memory cell and at least one bad memory cell Each of the memory cells is replaced by a dummy memory cell of the second plurality of dummy memory cells. |
| priorityDate | 2014-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.