http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104829859-B
Outgoing Links
Predicate | Object |
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classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08J9-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L79-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G73-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08J5-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08K3-36 |
filingDate | 2015-05-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2017-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2017-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-104829859-B |
titleOfInvention | A kind of application of porous low dielectric Kapton on PI cover layers |
abstract | The invention belongs to PI cover layers manufacture field, a kind of application of porous low dielectric Kapton on PI cover layers is provided, film is made up of polyimide matrix and reinforcer two parts, wherein, polyimide matrix mass fraction is 80~100wt%, reinforcer 0%~20wt% of mass fraction, the micropore with aperture size≤2 μm.Measured by experiment, the porous low dielectric Kapton lowest dielectric constant that the present invention is provided can reach 2.6, and tensile strength still keeps higher tensile strength to be 160MPa.It is 1.0 × 10 using the PI cover layer insulaion resistances that the porous low dielectric Kapton is made as base material 11 , 300.C, do not occur within 10 seconds bubble and lamination, peel strength is 1.3~1.6Kfg/cm, illustrate that the film of the invention provided has excellent character. |
priorityDate | 2015-05-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 51.