http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104821344-B

Outgoing Links

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0352
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filingDate 2015-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2016-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2016-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-104821344-B
titleOfInvention There is copper-indium-galliun-selenium film solar cell and the manufacture method thereof of quantum well structure
abstract The invention discloses a kind of copper-indium-galliun-selenium film solar cell with quantum well structure and manufacture method thereof, this battery includes the pn-junction formed by CIGS absorbed layer and CdS cushion, and the CIGS absorbed layer in the pn-junction structure of described copper-indium-galliun-selenium film solar cell includes the quantum well structure formed by multiple cycles.This SQW can separate and catch free electron, under the exciting of sunlight, forms larger current and improves the efficiency of thin-film solar cells.This quantum well structure avoids the abnormal growth of crystal grain and hole and the formation in crack, be prepared for densification, grain size uniformly, the high-quality thin film of energy gap coupling, meanwhile, quantum well structure is conducive to fully absorbing sunlight.Thus, further increase the efficiency of copper-indium-galliun-selenium film solar cell.
priorityDate 2015-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 33.