http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104821340-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1066 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1087 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41766 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41758 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-155 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7783 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0605 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-861 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66477 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-80 |
| filingDate | 2015-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104821340-B |
| titleOfInvention | Semiconductor devices |
| abstract | The present invention relates to semiconductor devices.Improve the characteristic of semiconductor devices.The semiconductor devices, which is configured to provide among n+ layer, n-layer, p-type layer, channel layer and the barrier layer being formed in above substrate, penetrates barrier layer and the groove of the middle section that reaches channel layer, the gate electrode being arranged in the groove by gate insulating film, the source electrode and drain electrode above the barrier layer that is formed in gate electrode two sides.N-layer and drain electrode are electrically connected to each other by reaching n+ layers of interconnecting piece.P-type layer and source electrode are electrically connected to each other by reaching the interconnecting piece of p-type layer.It is arranged between source electrode and drain electrode including the diode of p-type layer and n-layer, to prevent from causing element fracture because of avalanche breakdown. |
| priorityDate | 2014-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.