http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104813473-B
Outgoing Links
Predicate | Object |
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classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1462 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N25-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14685 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14689 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14612 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1461 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-266 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28123 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N5-374 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146 |
filingDate | 2012-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2017-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2017-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-104813473-B |
titleOfInvention | Method for manufacturing imaging device and imaging device |
abstract | An offset spacer (OSS) is formed on the side wall surfaces of the gate electrodes (NLGE, PLGE) so as to cover the region where the photodiode (PD) is disposed. Next, epitaxial regions (LNLD, LPLD) are formed using an offset isolation film or the like as an implantation mask. Next, a process of removing the offset isolation film covering the region where the photodiodes are arranged is performed. Next, a sidewall insulating film (SWI) is formed on the sidewall surface of the gate electrode. Next, source/drain regions (HPDF, LPDF, HNDF, LNDF) are formed using a sidewall insulating film or the like as an implantation mask. |
priorityDate | 2012-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.