http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104813473-B

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filingDate 2012-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2017-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2017-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-104813473-B
titleOfInvention Method for manufacturing imaging device and imaging device
abstract An offset spacer (OSS) is formed on the side wall surfaces of the gate electrodes (NLGE, PLGE) so as to cover the region where the photodiode (PD) is disposed. Next, epitaxial regions (LNLD, LPLD) are formed using an offset isolation film or the like as an implantation mask. Next, a process of removing the offset isolation film covering the region where the photodiodes are arranged is performed. Next, a sidewall insulating film (SWI) is formed on the sidewall surface of the gate electrode. Next, source/drain regions (HPDF, LPDF, HNDF, LNDF) are formed using a sidewall insulating film or the like as an implantation mask.
priorityDate 2012-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 31.