http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104795300-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2201-3125 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J9-025 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J31-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J29-04 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J9-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J29-04 |
| filingDate | 2014-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104795300-B |
| titleOfInvention | Electron emission source and manufacturing method thereof |
| abstract | The invention relates to an electron emission source, which comprises a first electrode, an insulated layer and a second electrode. The insulated layer is arranged between the first electrode and the second electrode in a stacking mode. The first electrode is the electron emission end of the electron emission source. The first electrode has a carbon nano-tube composite structure. The carbon nano-tube composite structure comprises a carbon nano-tube layer and a semiconductor layer composite layer arranged in a stacking mode. The semiconductor layer is located between the carbon nano-tube layer and the insulated layer. The invention also provides an electron emission source manufacturing method. |
| priorityDate | 2014-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.