http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104781917-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-762 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02505 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02433 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02647 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02642 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0684 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate | 2013-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104781917-B |
| titleOfInvention | III-N semiconductor structure and technology on silicon |
| abstract | The invention discloses III-N semiconductor integrated circuit structure and technologies on silicon.In some cases, the structure includes the first semiconductor layer being formed on nucleating layer, and first semiconductor layer includes on the nucleating layer and the 3-D GaN layer with multiple 3-D semiconductor structures and the 2-D GaN layer in the 3-D GaN layer.The structure can also include being formed in the second semiconductor layer on first semiconductor layer or interior, wherein second semiconductor layer includes the AlGaN layer in the 2-D GaN layer and the GaN layer in the AlGaN layer.Another structure includes the first semiconductor layer being formed on nucleating layer and is formed in the second semiconductor layer on first semiconductor layer or interior, wherein, first semiconductor layer includes the 2-D GaN layer on the nucleating layer, and second semiconductor layer includes the ALGaN layer in the 2-D GaN layer and the GaN layer on the ALGaN layer. |
| priorityDate | 2012-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.