http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104764987-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate | 2015-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104764987-B |
| titleOfInvention | A kind of acquisition methods of electronic power switch device IGBT high frequency model parasitic parameters |
| abstract | The invention discloses a kind of acquisition methods of electronic power switch device IGBT high frequency model parasitic parameters, the high frequency EMI characteristics of side circuit breaker in middle device are contrasted with the high frequency EMI characteristics of artificial circuit breaker in middle device, then adjustment is optimized to the switching device model parasitic parameter of set up artificial circuit using particle cluster algorithm, so that the high frequency EMI characteristics of artificial circuit breaker in middle device reached with the high frequency EMI characteristics of side circuit breaker in middle device it is consistent, therefore, the method of the present invention can accurately set up high accuracy, high performance simulation model, and then can effectively instruct the research and development of side circuit, probability of doing over again is greatly reduced during side circuit is researched and developed, shorten fabrication cycle, reduce cost of manufacture. |
| priorityDate | 2015-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5368053 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID426146771 |
Total number of triples: 11.