| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_48de1cfdc993735cdc1c82f96827b33e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-1135
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-861
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K2102-341
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-17
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-48 |
| filingDate |
2013-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ca09b32124bfc8e966c456d81068400f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a6710eefb2ba358bf352e6fc509bec0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_87b1be450642637e6c16bb582230f254 |
| publicationDate |
2015-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-104756274-A |
| titleOfInvention |
Electro-optical device stack |
| abstract |
There is provided a method of manufacturing an electro-optical device stack (10), the method comprising providing a multi-layered structure comprising an electro-optical layer (13) contacting a charge injection layer (12), the charge injection layer (12) comprising an acidic compound (12m); depositing a resist layer (14) onto the electro-optical layer (13), the resist layer (14) comprising a cationically-crosslinkable resist material (14m); having the resist material (14m) react adjacent breaches (12',13') in the electro-optical layer (13) by a cross-linking reaction induced by protons (12p) from the charge injection layer (12) thereby covering said breaches (12',13') with patches (14p) comprising cross-linked resist material (14c); and removing parts of the resist material (14m) that have not cross-linked, wherein the patches (14p) remain arranged for providing electrical insulation between the charge injection layer (12) and a layer subsequently deposited onto the electro-optical layer (13) and patches (14p). |
| priorityDate |
2012-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |