http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104752483-B

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filingDate 2014-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2018-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2018-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-104752483-B
titleOfInvention Top emission type organic light emitting display device and manufacturing method thereof
abstract A top emission type organic light emitting display device and a manufacturing method thereof. A top emission type light emitting display device and a corresponding manufacturing method are described. The device substrate has a display area and a non-display area. Formed in the display area are: a thin film transistor including an active layer, a gate, a source and a drain; and an organic light emitting element including an anode, an organic light emitting layer and a cathode. In the non-display area, the second voltage supply line is formed on and overlaps the first voltage supply line. An anti-burnout layer is arranged between the first voltage supply line and the second voltage supply line. The anti-burnout layer is an insulating layer having the same thickness as the interval sufficient to suppress burnout of the lines in the overlapping region between the first voltage supply line and the second voltage supply line, thereby improving reliability and reliability of the device. Manufacturing yield.
priorityDate 2013-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 25.