http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104752331-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76805 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2013-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104752331-B |
| titleOfInvention | A kind of silicon hole lithographic method |
| abstract | A kind of silicon hole lithographic method to reduce the recess of through-silicon via sidewall, including：It places on the pedestal in pending substrate to reaction chamber, includes insulation material layer and the silicon material layer above insulation material layer on the pending substrate, further include patterned mask layer opening above silicon material layer；Reaction gas is passed through to the reaction chamber, is applied in source radio-frequency power to the reaction chamber, plasma is formed, Open Side Down etches and form silicon hole from Patterned masking layer；Pass through a biasing radio-frequency power supply output biasing radio-frequency power to the pedestal；It is characterised in that it includes it is in impulse type to bias radio-frequency power at least one stage, output power switches between high-power output step and low-power output step, and the duty ratio of the biasing RF power pulses is less than 10%. |
| priorityDate | 2013-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541 |
Total number of triples: 14.