http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104752326-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-743 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2013-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104752326-B |
| titleOfInvention | The method for forming interconnection structure |
| abstract | A method of interconnection structure is formed, including：Substrate is provided, substrate surface is formed with interlayer dielectric layer, hard mask layer and bottom anti-reflection layer；Graphic bottom anti-reflection layer is to form opening；Reaction gas is passed through to form polymeric layer in the side wall of opening to opening；It is mask to remove part hard mask layer using polymeric layer and bottom anti-reflection layer；Using remaining hard mask layer as etching mask, interlayer dielectric layer is performed etching, to form contact hole.The beneficial effects of the present invention are, by forming polymeric layer to offset relative to the opening size in photoresist layer, the part of the opening formed in bottom anti-reflection layer and hard mask layer become large-sized, it is more accurately open with forming size, and then ensure that the size of the opening formed in interlayer dielectric layer or groove and predetermined value are close as possible, to avoid there is a phenomenon where be connected to the probability for reducing the plug of formation or circuit generation short circuit between adjacent opening either groove. |
| priorityDate | 2013-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.