http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104752119-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J9-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-20 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J9-00 |
| filingDate | 2013-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104752119-B |
| titleOfInvention | The manufacture method of plasma process chamber and its electrostatic chuck |
| abstract | The invention provides a kind of plasma process chamber and its manufacture method of electrostatic chuck, wherein, the manufacture method comprises the following steps：One ceramic bases are provided；Some through holes are beaten in the ceramic bases, the through hole is used to accommodate metal contact wires；Some metal contact wires are provided, some metal contact wires are inlaid among some through holes of the ceramic bases respectively；The ceramic bases for having inlayed metal contact wires are heated using diffusion welding (DW) in vacuum environment so that the metal contact wires and through hole weld together；DC electrode is placed on the ceramic bases；Etch resistant layer is coated on the ceramic bases that placed DC electrode layer.Metal contact wires produced by the present invention, will not damage DC electrode layer, also extremely stablize continuing coating etch resistant layer thereon. |
| priorityDate | 2013-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.