http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104745095-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-02 |
| filingDate | 2015-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-06-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-06-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104745095-B |
| titleOfInvention | A kind of GaN thick films piece CMP composition and preparation method thereof |
| abstract | The present invention relates to a kind of GaN thick films piece CMP composition and preparation method thereof, belong to microelectronics auxiliary material and Ultra-precision Turning technology field, more particularly to a kind of polishing composition containing solid-phase catalyst.The present composition includes deionized water, solid-phase catalyst, oxidant, polishing abrasive particle, pH adjusting agent, and the pH value of the polishing composition is 1.0 4.3.The present invention uses solid-phase catalyst, promotes the oxidation during CMP, solves the problems, such as GaN galliums face hardly possible corrosion processing；And obtain high-quality gallium nitride polished surface；, without scrap build, cost is considerably lower, and process implementing is simple for the present invention. |
| priorityDate | 2015-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 88.