http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104743496-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2013-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104743496-B |
| titleOfInvention | Deep silicon etching method and equipment for deep silicon etching |
| abstract | The present invention provides a deep silicon etching method. The deep silicon etching method comprises the step of performing repeated plasma etching on a substrate arranged in a reaction chamber to form a groove on the substrate until the depth of the groove achieves a preset value, wherein the deep silicon etching method also comprises the step of performing atomic layer deposition between two adjacent steps of plasma etching so that a protective film is covered on the side wall of the groove. The present invention also provides equipment for deep silicon etching. In the present invention, a uniform protective film can be formed on the side wall of the groove on the substrate through the adoption of the self-inhibition characteristic of the atomic layer deposition, thereby obtaining a better etching appearance in the etching process and obtaining the groove with high depth-width ratio through etching. |
| priorityDate | 2013-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 14.