| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2301-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1085 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N21-958
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-32341
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-320275
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2201
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34333
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0206
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0014 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01B11-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-301 |
| filingDate |
2013-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_614823781495ee63e4661f0b27a53ae1 |
| publicationDate |
2015-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-104737394-A |
| titleOfInvention |
Group-III nitride semiconductor laser element, method for producing group-III nitride semiconductor laser element, method for evaluating end surface for optical resonator of group-III nitride semiconductor laser element, and method for evaluating scribe groove |
| abstract |
A group-III nitride semiconductor laser having a laser resonator that enables a reduction in disturbance due to return light on a semipolar surface of a substrate in which the c-axis of a group-III nitride is inclined in the direction of an m-axis, wherein when the angle (ALPHA) is in the range of 71-79 degrees inclusive, the angle ([alpha]1) is in the range of 10-25 degrees inclusive, and the angle ([beta]1) is in the range of 0-5 degrees inclusive. At a first end surface in the vicinity of a first surface closer to an epi-surface, the angle formed by a first normal vector (ENV1) and a c+ axis vector (VC+) within an m-n plane has a value close to the angle ([alpha]1) (for example, in the range of 10-25 degrees inclusive). At the first end surface in the vicinity of the back surface of the substrate, the angle formed by a second normal vector (ENV2) and the c+ axis vector (VC+) within the m-n plane has a value close to the angle ([beta]1) (for example, in the range of 0-5 degrees inclusive). |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10686296-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11742633-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10938180-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108141004-A |
| priorityDate |
2012-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |