http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104715805-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B13-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B1-22 |
| filingDate | 2015-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104715805-B |
| titleOfInvention | Unleaded thick film conductive paste for aluminium nitride substrate |
| abstract | The invention discloses unleaded thick film conductive paste for an aluminium nitride substrate. The unleaded thick film conductive paste for the aluminium nitride substrate comprises, by weight, 75-85 parts of silver-palladium metal powder, 6-12 parts of glass powder, and 10-20 parts of organic carriers. The provided unleaded thick film conductive paste for the aluminium nitride substrate is developed mainly for the aluminium nitride (AlN) substrate, and is applicable to the manufacturing of an aluminium nitride (AlN) power load product of high power, high reliability, high frequency, small volume and stable performance; a glass system adopted does not include highly toxic lead oxide and has the advantages of low melting point, moderate expansion, good wettability and the like, and no reaction with the aluminium nitride (AlN) substrate occurs, the conductivity of a prepared thick film conductive layer is good, and adhesive force between the prepared thick film conductive layer and the aluminium nitride (AlN) substrate is strong. |
| priorityDate | 2015-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.