http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104698761-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-36 |
| filingDate | 2013-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104698761-B |
| titleOfInvention | OPC model calibration method based on area |
| abstract | A kind of OPC model calibration method based on area, including：Initial OPC model, wafer figure are provided and the lithography process parameters of the wafer figure are formed；Obtain the real area of the wafer figure；The wafer figure and above-mentioned lithography process parameters are input in initial OPC model, the simulation figure corresponding with wafer figure is obtained, the area of the simulation figure is obtained；On the basis of the real area of wafer figure, the initial OPC model is calibrated, until the phase difference between the area of the simulation figure and the real area of corresponding wafer figure is less than or equal to first predetermined value.The OPC model obtained by above method calibration is more accurate, can effectively improve yield during follow-up manufacture conductive hole. |
| priorityDate | 2013-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID767 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID407832259 |
Total number of triples: 12.