http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104681538-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-528 |
| filingDate | 2013-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104681538-B |
| titleOfInvention | Contact hole and forming method thereof |
| abstract | A kind of contact hole of present invention offer and forming method thereof, the forming method of the contact hole, including：Substrate is provided；Form grid, source region and drain region；Form interlayer dielectric layer；Contact hole is formed in interlayer dielectric layer；Layer of dielectric material and mask layer are formed in contact hole；Remove the layer of dielectric material positioned at contact hole side wall upper part；Remove the mask layer；Layer of dielectric material is removed, remaining layer of dielectric material is respectively positioned on the bottom of contact hole side wall；Conductive plunger is formed in the contact hole.The present invention also provides a kind of contact hole, including substrate, grid, source region and drain region；Interlayer dielectric layer and contact hole；Located at the layer of dielectric material of the contact hole lower sidewall, and the conductive plunger in the contact hole.The beneficial effects of the present invention are：The distance of grid and conductive plunger is increased, after conductive plunger is formed, the parasitic capacitance between grid and conductive plunger is reduced. |
| priorityDate | 2013-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.