http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104637866-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2013-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-01-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-01-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104637866-B |
| titleOfInvention | Silicon hole lithographic method |
| abstract | The present invention relates to technical field of semiconductors, disclose a silicon hole lithographic method, including etch step alternately and side wall deposition step, the time that performs of the side wall deposition step is no more than the interval time that adjacent twice etching step performs, and the execution time of the side wall deposition step is gradually reduced.It is an advantage of the invention that, as etching depth gradually deepens, the execution time of side wall deposition step gradually shortens, by the execution time for adjusting the side wall deposition step repeated, change the intake of etching gas and deposition gases in etching process, so as to change the distribution on etching structure surface and side wall etching gas, deposition gases and its caused plasma, realize the homogeneity of high aspect ratio structure etching, and etching structure surface roughness and verticality of side wall have been ensured, the etching structure of high quality can be obtained. |
| priorityDate | 2013-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 15.