| abstract |
The invention discloses a method for preparing a niobium-silicon film by utilizing a magnetron co-sputtering method. The method comprises the following steps: (1) selecting a target, namely selecting massive Nb and Si which have the purity of 99.999 percent and are uniformly doped as a magnetron co-sputtering target, and putting the target into a magnetron co-sputtering chamber; (2) treating a substrate, namely cleaning the substrate by using ultrasonic waves, acetone, alcohol and argon ions, ad putting the substrate into the magnetron co-sputtering chamber; and (3) preparing the niobium-silicon film, wherein the vacuum degree of the magnetron co-sputtering chamber is less than or equal to 2*10<-5>Pa, the working gas is argon, the sputtering pressure, the sputtering power, the deposition rate and the distance from the target to the substrate are regulated, and the film is prepared by sputtering in a certain time. A stable NbSi superconducting film which accords with the expected aim is prepared, the optimal preparation conditions are obtained through optimization, and a foundation is laid for preparing a high-sensitivity superconducting single-photon detector (SNSPD). |