http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104616990-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28008 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2013-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104616990-B |
| titleOfInvention | The forming method of metal gates |
| abstract | A kind of forming method of metal gates, including：Semiconductor substrate is provided；The first dummy grid and the second dummy grid being connected are formed on the semiconductor substrate；Remove in the first dummy grid formation first groove, recessed second dummy grid of side wall of the first groove and form side groove；Form filling block and fill up the side groove；The first metal gates are formed in the first groove.The side groove that methods described occurs by being formed filling block to fill up in manufacturing process, form the first groove in the absence of side groove, therefore the first workfunction layers and the first metal gates can be normally formed in first groove, do not influenceed by the side groove occurred during making, improve the reliability of transistor. |
| priorityDate | 2013-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.