http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104603962-B

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filingDate 2013-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2018-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2018-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-104603962-B
titleOfInvention Method for manufacturing the opto-electronic semiconductor chip with reflecting electrode
abstract The present invention proposes a kind of method for being used to manufacture opto-electronic semiconductor chip (1), and methods described comprises the steps:Layer sequence (10) is provided;The mirror layer (21) of metal is arranged on the upside of layer sequence (10);Mirror protective layer (3) is arranged on the side (21c) exposed of mirror layer;Partly remove layer sequence (10); wherein mirror layer (21) has the opening (23) towards the layer sequence (10); the opening is along horizontal direction by mirror protective layer (3) surrounding edge; layer sequence (10) is removed at least in part to carry out in the region of the opening (23) of mirror layer (21), and mirror protective layer (3) is arranged on the side (21c) exposed of mirror layer (21) in a manner of self-regulation.
priorityDate 2012-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 30.