| abstract |
There is provided the selective epitaxial growth process that a kind of groove is limited, wherein, the epitaxial growth of semiconductor device layer is carried out in the restriction of groove.In embodiment, groove is made, make the original planar semiconductor the surface of the seed of its bottom for including being arranged on the groove.The semiconductor regions of encirclement the surface of the seed can be made to be recessed relative to the surface of the seed, wherein, isolation dielectric is set onto the semiconductor regions, to surround the semiconductor kind layer and form groove.In the embodiment for forming groove, can will sacrifice hard mask fin and cover in dielectric, the dielectric is planarized afterwards, to expose the hard mask fin, the hard mask fin be removed afterwards, to expose the surface of the seed.Semiconductor device layer is formed from the surface of the seed by selective hetero-epitaxy.In embodiment, nonplanar device is formed from the semiconductor device layer by making the top surface of isolation dielectric be recessed.In embodiment, the non-planar CMOS devices with high carrier mobility can be made by the semiconductor device layer. |